Enhancment of RHEED oscillations during Cs - Induced GaAs MBE
The growth of low temperature GaAs with high structural quality of the epitaxial film was carried out using Cs as surfactant. All growth process were carried out in the Katun-C molecular beam epitaxy system equipped with a 30 keV reflections of high energy electron diffractions (RHEED). It was observed that the RHEED oscillations were visible at the temperature as low as 250°C. The results on the morphology of the GaAs(001) surface grown at 200°C with Cs pre-deposition showed a smooth surface.