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ISSN - 00213640, EISSN - 10906487, JETP Letters, 2004, vol. 79, p. 479-483

Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity

Pakhnevich A. A., Bakin V. V., Yaz'kov A. V., Shaǐbler G. É, Shevelev S. V., Tereshchenko O. E., Yaroshevich A. S., Terekhov A. S.

Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of p-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of p-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold. © 2004 MAIK "Nauka/ Interperiodica".