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ISSN - 00213640, EISSN - 10906487, JETP Letters, 2008, vol. 88, p. 520-523

Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs, O) surface

Toropetsky K. V., Tereshchenko O. E., Terekhov A. S.

The probability of Cs-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface is experimentally shown to be close to unity only when the work function does not exceed 3.1± 0.1 eV. The measured adsorption energy threshold likely corresponds to the energy of the unoccupied level of the antibonding 2π*orbital of the O2 molecule in the preadsorption state on the semiconductor surface. © 2008 Pleiades Publishing, Ltd.