ISSN - 18626351, EISSN - 16101642, Physica Status Solidi (C) Current Topics in Solid State Physics, 2010, vol. 7, p. 264-267
Preparation of As-rich (2×4) - III-As(001) surfaces by wet chemical treatment and vacuum annealing
The GaAs and InAs (001) surfaces chemically treated in HClisopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of photoemission, low energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). The photoemission results demonstrated that the chemical treatment removed native oxides from Ga(In)As surfaces and yielded As-rich surface with several monolayers of excess arsenic and small amounts of GaClx (InClx). Annealing at relatively low-temperatures induced desorption of this overlayer and revealed a clean arsenic-rich (2x4)/c(2x8) structure on GaAs and InAs(100) surfaces. The structural properties of chemically prepared III-As (001) surfaces were found to be similar to those obtained by decapping of Ascapped epitaxial layers. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.