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ISSN - 00213640, EISSN - 10906487, JETP Letters, 2010, vol. 91, p. 466-470

Reconstruction dependence of the etching and passivation of the GaAs(001) surface

Tereshchenko O. E., Eremeev S. V., Bakulin A. V., Kulkova S. E.

The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer ("digital") etching of GaAs(001) controlled by the reconstruction transitions on this surface. © 2010 Pleiades Publishing, Ltd.