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ISSN - 10980121, Physical Review B - Condensed Matter and Materials Physics, 2010, vol. 81, p. -

Cs-induced charge transfer on (2×4 ) -GaAs(001) studied by photoemission

Tereshchenko O. E., Paget D., Chiaradia P., Wiame F., Taleb-Ibrahimi A.

Cesium adsorption on (2×4) -GaAs(001) was studied by photoemission and low-energy electron diffraction. The different Cs-induced changes of As3d and Ga3d core-level spectra show that charge transfer is almost complete for Ga surface sites, but is negligible to surface As at a coverage ΘCs <0.3 ML. The situation becomes opposite for ΘCs >0.3 ML, at which transfer occurs to As but no longer to Ga. Charge transfer to As atoms leads to surface disordering and destabilization and induces surface conversion from As-rich to Ga-rich (4×2) -GaAs(001) surface after annealing at a reduced temperature of 450°C. © 2010 The American Physical Society.