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ISSN - 15287483, EISSN - 15287505, Crystal Growth and Design, 2011, vol. 11, p. 5507-5514

Formation of inert Bi 2Se 3(0001) cleaved surface

Atuchin V. V., Golyashov V. A., Kokh K. A., Korolkov I. V., Kozhukhov A. S., Kruchinin V. N., Makarenko S. V., Pokrovsky L. D., Prosvirin I. P., Romanyuk K. N., Tereshchenko O. E.

A high quality inclusion-free Bi 2Se 3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi 2Se 3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi 2Se 3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM. © 2011 American Chemical Society.