ISSN - 15287483, EISSN - 15287505, Crystal Growth and Design, 2011, vol. 11, p. 5507-5514
Formation of inert Bi 2Se 3(0001) cleaved surface
A high quality inclusion-free Bi 2Se 3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi 2Se 3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi 2Se 3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM. © 2011 American Chemical Society.