ISSN - 00218979, EISSN - 10897550, Journal of Applied Physics, 2012, vol. 112, p. -
Inertness and degradation of (0001) surface of Bi2Se3 topological insulator
Inertness of the cleaved (0001) surface of the Bi2 Se 3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flat Bi2 Se 3 (0001) (1 × 1) surface after a long-time air exposure. The inertness of Bi2 Se3 (0001) to O2 and NO 2, as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations. © 2012 American Institute of Physics.