ISSN - 14668033, CrystEngComm, 2014, vol. 16, p. 581-584
Melt growth of bulk Bi2Te3 crystals with a natural p-n junction
Single crystals of Bi2Te3 were grown from Bi-Te melts using the modified Bridgman method. It was shown for the first time that solidification of 61 and 62 mol.% Te melts provides a built-in p-n junction on the cleaved plane of as grown crystals without any post growth treatment. The formation of a p-n junction along the growth crystal was explained by Te segregation. Both p- and n-parts of the ingot have shown high carrier concentrations n ≈ p ≈ 1 × 1019 cm-3 and high carrier mobility ∼104 cm2 V s-1 at 4 K. In the transition p-n region, Hall carrier concentration is decreased by two orders of magnitude as a result of intrinsic compensation of carriers. © 2014 The Royal Society of Chemistry.