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ISSN - 00036951, EISSN - 10773118, Applied Physics Letters, 2013, vol. 105, p. -

Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

Valisheva N. A., Aksenov M. S., Golyashov V. A., Levtsova T. A., Kovchavtsev A. P., Gutakovskii A. K., Khandarkhaeva S. E., Kalinkin A. V., Prosvirin I. P., Bukhtiyarov V. I., Tereshchenko O. E.

© 2014 AIP Publishing LLC. In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH4F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Qfix) and density of interface states (Dit) in the range of (4-6)×1010cm-2 and (2-12)×1010eV-1cm-2, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.