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ISSN - 0030400X, EISSN - 15626911, Optics and Spectroscopy (English translation of Optika i Spektroskopiya), 2013, vol. 117, p. 764-768

Optical properties of BiTeI semiconductor with a strong Rashba spin-orbit interaction

Makhnev A. A., Nomerovannaya L. V., Kuznetsova T. V., Tereshchenko O. E., Kokh K. A.

© 2014, Pleiades Publishing, Ltd. The optical properties of BiTeI crystals in the range of 0.09–5.0 eV are studied by optical spectral ellipsometry. The fundamental characteristics of the electronic structure are determined. The optical gap is estimated to be Eg = 0.33 eV. The plasma frequency of conduction electrons is determined to be ωp = 0.13 eV. A fine structure of low-energy electronic transitions is found in the range 0.15–0.44 eV between the plasma edge and the intense interband absorption threshold. The singularities at 0.2 and 0.3 eV are related to the transitions between bulk conduction bands split by a strong Rashba spin-orbit interaction.