The peculiarities of halogens adsorption on A3B5(001) surface
© Published under licence by IOP Publishing Ltd. Theoretical study of the F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable configurations of halogens on Ga-rich ζ-(4×2) reconstruction are determined with increasing of adatoms concentration. The bonds weakening is found more significant for the F and Cl atoms which can induce stationary etching whereas I-induced changes in Ga-As binding energy is not sizable and its adsorption lead to the surface passivation.