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ISSN - 09359648, Advanced Materials, 2016, vol. 28, 11, p. 2183-2188

Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading

Bathon Thomas, Achilli Simona, Sessi Paolo, Golyashov Vladimir Andreevich, Kokh Konstantin Aleksandrovich, Tereshchenko Oleg Evgenievich, Bode Matthias

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p- and n-doped, respectively; color-coded tunneling spectra are taken over 60 nm at the transition region.