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ISSN - 20452322, Scientific Reports, 2017, vol. 7, p. -

Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi<inf>2</inf>Te<inf>2.4</inf>Se<inf>0.6</inf>

Klimovskikh I. I., Sostina D., Petukhov A., Rybkin A. G., Eremeev S. V., Chulkov E. V., Tereshchenko O. E., Kokh K. A., Shikin A. M.

© 2017 The Author(s). Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi 2 Te 2.4 Se 0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi 2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.