Sizov, F. F.; Golenkov, O. G.; Reva, V. P.; But, D. B.
(Новосибирский государственный университет, 2010)
The influence of the external load resistance on voltage and current sensitivities of Si n-MOSFET THz detectors at radiation frequency ν=142 GHz is investigated. The noise level in the frequency band, which is needed for ...